Ordered porous metal oxide semiconductors for gas sensing

Verfasser / Beitragende:
Zhou, Xinran; Elzatahry, Ahmed A; Zhao, Dongyuan; Cheng, Xiaowei; Zhu, Yongheng; Deng, Yonghui; Alghamdi, Abdulaziz
Ort, Verlag, Jahr:
Elsevier B.V, 03-01-2018
Zeitschriftentitel:
Chinese chemical letters, Jg. 29; H. 3; S. 405 - 416
Format:
Journal Article
Online Zugang:
ID: FETCH-LOGICAL-c2634-256b9d24cf063893b11c4449cc7761742ccd1a3c514171bf44d2856b20492da33

[Display omitted] This review gives a comprehensive summary about the porous metal oxides with focus on the synthesis methods, structure related properties, as well as the modification strategies for gas sensing improved performances. Among various gas sensing materials, metal oxide semiconductors have shown great potential as resistive type sensors. The ordered porous structural metal oxide semiconductors with well-defined meso- or macro-pores chemically synthesized via soft-templating method and nanocasting strategy have high porosity, highly interconnected pore channels and high surface area with enormous active sites for interacting with gaseous molecules. These features enable them good performance in gas sensing, including high sensitivity, fast response and recovery, good selectivity. This review gives a comprehensive summary about the porous metal oxides with focus on the synthesis methods, structure related properties, as well as the modification strategies for gas sensing improved performances.

Chinese chemical letters

Metal oxides; Gas sensing; Porous materials; Templating-synthesis; Metallic oxides; Sensors; Semiconductors; Properties; Innovations; Metal oxides; Gas sensing; Porous materials; Templating-synthesis

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